IEEE Webinar on High Voltage SiC MOSFETs

Arrangör IEEE PES/PEL Sweden Chapter
Tid 2021-01-14 14:0016:00
IEEE Webinar on High Voltage SiC MOSFETs
 

IEEE Seminar on “Gate Drive and Protection for 1200 V and 10 kV SiC MOSFETs” by Prof Leon M. Tolbert, University of Tennessee

SiC MOSFETs have brought improvements in efficiency, size, and weight to several applications such as transportation, data center power supplies, and electric utility converters. These fast switching devices enable higher bandwidth control and smaller filter size, but also can cause issues in converters because their high dv/dt and di/dt can induce overvoltages or cross-talk in an inverter phase leg. This webinar will provide several gate drive and protection techniques that enable high-speed switching of these devices without incurring cross-talk or overvoltage penalties.  The webinar will include discussion of voltage source, current source, and charge pump gate drive techniques.

Application of high voltage SiC devices have unique challenges in isolation, high dv/dt rates, and this webinar will provide guidance on issues associated with using these devices in converters and solutions in regards to high voltage power supplies, gate drives, and protection.  The webinar will include experimental results of using 10 kV SiC MOSFETs in an MMC module and converter and some of the challenges encountered.